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Updated Mon 06 September 2010 |
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Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Source | Comment |
|---|---|---|---|---|---|---|---|---|---|---|
| DT1957 | 1 | 1000.00 | CdTe | [111] | 10x10 | 500 | P/E | WW aro 3-5 wks | ||
| DT1972 | 1 | 300.00 | ZnO | [0001] | 5x5 | 500 | P/P | WW aro 2 wks | ||
| DT1971 | 1 | 350.00 | ZnO | [0001] | 5x5 | 500 | P/E | WW aro 2 wks | ||
| DT1965 | 1 | 300.00 | ZnO | [11-20] | 5x5 | 500 | P/P | WW aro 2 wks | A-PLANE | |
| DT1968 | 1 | 300.00 | ZnO | [1-100] | 5x5 | 500 | P/P | WW aro 2 wks | M-PLANE | |
| DT1967 | 1 | 350.00 | ZnO | [1-100] | 5x5 | 500 | P/E | WW aro 2 wks | M-PLANE | |
| DT1966 | 1 | 350.00 | ZnO | [11-20] | 5x5 | 500 | P/E | WW aro 2 wks | A-PLANE | |
| DT1960 | 1 | 700.00 | ZnO | [0001] | 10x10 | 500 | P/P | WW aro 2 wks | ||
| DT1959 | 1 | 600.00 | ZnO | [0001] | 10x10 | 500 | P/E | WW aro 2 wks | O face polished | |
| DT1970 | 1 | 600.00 | ZnO | [1-100] | 10x10 | 500 | P/P | WW aro 2 wks | M-PLANE | |
| DT1964 | 1 | 600.00 | ZnO | [11-20] | 10x10 | 500 | P/P | WW aro 2 wks | A-PLANE | |
| DT1963 | 1 | 600.00 | ZnO | [11-20] | 10x10 | 500 | P/E | WW aro 2 wks | A-PLANE | |
| DT1969 | 1 | 600.00 | ZnO | [1-100] | 10x10 | 500 | P/E | WW aro 2 wks | M-PLANE | |
| DT1962 | 1 | 1000.00 | ZnSe | [001] | 10x10 | 500 | P/P | WW aro 3-5 wks | ||
| DT1961 | 1 | 800.00 | ZnSe | [001] | 10x10 | 500 | P/E | WW aro 3-5 wks |
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Material | Form. | Diam (mm) |
Thck (μm) |
Surf. | Source | Comment | Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| F95 | 2 | 120.00 | SOS 0.3u | [1012] | 3" | 450 | Epi | Moscow #33 | n-type 3-12 | Silicon on Sapphire | |
| T01 | 2 | 200.00 | Tellurium | 2" | Moscow 15 | Hi purity | Monocrystal | ||||
| BS1 | 1 | ?.?? | Borosilica | Samples | ITME 21 | Ultra High Res. Borosilica | |||||
| Mg1 | 99.99 | 72.00 | Magnesium | pieces | 10x10 | 1-2mm | 12Mg24 | PAN aro 6 wks | Ultra pure | 5N8 pure (6N metals) | |
| Mn2 | 99.99 | 26.50 | Manganese | boules | 6-20mm | 20-30mm | 25Mn55 | PAN aro 6 wks | Ultra pure | 5N7 pure (5N8 metals) | |
| Mn1 | 99.99 | 12.50 | Manganese | granules | <10mm | 25Mn55 | PAN aro 6 wks | Ultra pure | 5N7 pure (5N8 metals) | ||
| Mg2 | 99.99 | 108.00 | Magnesium | boules | 10-20 | 10-30mm | 12Mg24 | PAN aro 6 wks | Ultra pure | 5N8 pure (6N metals) |
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Material | Form. | Diam (mm) |
Thck (μm) |
Surf. | Source | Comment | Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 2dt | 1 | 250.00 | NdGaO3 | 2" | 500 | P/P | ITME | ||||
| 2ct | 1 | 250.00 | SrLaAlO4 | 10x10 | 500 | P/P | ITME | ||||
| 2bt | 1 | 250.00 | SrLaGaO4 | 10x10 | 500 | P/P | ITME |
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Material | Form. | Diam (mm) |
Thck (μm) |
Surf. | Source | Comment | Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| L03b | 10 | 20.00 | LiNbO3 | X | 4.32x3.81 | 38±5 | L/L | ITME 28 | Face to +X | Long@Y-36, Wide@+Z axis | |
| A390 | 50 | 19.60 | LiNbO3 | Y-128° | 3" | 500±25 | P/G | Castech | Flat at [X] | in 25 wafer cst | |
| B390 | 5 | 24.00 | LiNbO3 | Y-128° | 3" | 500±25 | P/G | Castech | Flat at [X] | in Individual cst | |
| L04 | 4 | 125.00 | LiTaO3 | Z cut | 3" | 1mm | P/P | SEMICON | no=2.176; ne=2.180 gradient 0.005%/cm, r33=30.4pm/V (all at 632.8nm), X flat |
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Material | Form. | Diam (mm) |
Thck (μm) |
Surf. | Source | Comment | Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| K1 | 818 | ?.?? | Alfa SiO2 | R cut | 100mm x 35mm | ITME | Quartz | Crystal Ingot | |||
| K2 | 296 | ?.?? | Alfa SiO2 | ITME | Quartz | Crystal Ingot | |||||
| Q4 | 1 | 54.00 | Alfa SiO2 | ST-cut | 100mm | 500 | P/G | ITME | RH twins | 25mm X flat, SeedFree | |
| Q1 | 1 | 20.00 | Alfa SiO2 | 3" | G/G | ITME | translucent | Fine ground, unpolished | |||
| D671 | 5 | 44.80 | Quartz | [ST] | 100.0 | 500 | P/G | ITME | translucent, Epi-Ready | Ra<6A, One [X](1,1,-2,0) Flat |
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Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Source | Comment | Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| D076 | 4 | 58.00 | Sapphire[C] | [0001] | 2" | 430 | P/P | Episto | 1 Flat @ [A] | Epi Ready for GaN; in single wafer csts | |
| D667 | 8 | 75.00 | Sapphire[C] | [0001] | 2" | 430 | P/P | Episto | NO Flats | Epi-Ready; in single wafer csts | |
| 1208 | 19 | 66.00 | Sapphire[C] | [0001] | 2" | 430 | P/P | Episto Due 9/17 | NO Flats | Epi-Ready; in single wafer csts | |
| B843 | 4 | 240.00 | Sapphire[C] | [0001] | 2" | 5,000 | P/G | Comsec | 1 Flat @ [A] | Epi-Ready; in single wafer csts | |
| 9270 | 13 | 98.00 | Sapphire[A] | [1,1,-2,0] | 2" | 430 | P/P | Episto | 1 Flat @ [C] | Epi-Ready; in single wafer cst | |
| E667 | 5 | 118.00 | Sapphire[C] | [0001] | 3" | 430 | P/P | Episto | 1 Flat @ [A] | Epi-Ready both sides, in single wafer csts | |
| SP1 | 1 | 240.00 | Sapphire | Plate | 80 x 120mm | 2mm | SEMICON #6 | Sapphire plate | |||
| Sp2C2 | 10 | 39.60 | Sapphire[C] | [0001] | 2" | 430 | P/P | Episto Aro 4 wks | 1 Flat @ [A] | Epi-Ready for GaN; in single wafer csts | |
| AF74b | 25 | 196.00 | Sapphire | [0001] | 4" | 500 | P/E | aro 7 wks |
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Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Source | Resistivity Ohmcm |
Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| 9532 | 15 | 49.60 | n-type SiC (6H) | on-axis | 10×10 | 430 | P/E | Xiamen | 0.02-0.20 | Ra<1 nm, Usable area>85%, Epi-Ready; Sealed 5 wafers/cst | |
| AH81c | 5 | 320.00 | n-type SiC:N (4H) | [0001] | 2" | 330 | P/P | Xiamen aro 3-4 wks | Grade C | Ra<0.5 nm, MPD<100 cm-2, RT<0.2 Ohmcm, Bow/Warp/TTV<35um | |
| AH81j | 5 | 872.00 | Instrinsic SiC:N (6H) | [0001] | 2" | 330 | P/E | Xiamen aro 3-4 wks | Grade C | Ra<0.5 nm, MPD<50 cm-2, RT:85%, Ro>1E5 Ohmcm | |
| AH81i | 5 | 482.00 | Instrinsic SiC:N (6H) | [0001] | 2" | 330 | P/E | Xiamen aro 3-4 wks | Grade D | Ra<0.5 nm, MPD<100 cm-2, RT:85%, Ro>1E4 Ohmcm | |
| AH81d | 5 | 360.00 | n-type SiC:N (4H) | [0001] | 2" | 330 | P/P | Xiamen aro 3-4 wks | Grade C | Ra<0.5 nm, MPD<50 cm-2, RT<0.1 Ohmcm, Bow/Warp/TTV<25um | |
| AH81b | 5 | 360.00 | n-type SiC:N (6H) | [0001] | 2" | 330 | P/P | Xiamen aro 3-4 wks | Grade C | Ra<0.5 nm, MPD<50 cm-2, RT<0.2 Ohmcm, Bow/Warp/TTV<25um | |
| AH81 | 5 | 320.00 | n-type SiC:N (6H) | [0001] | 2" | 330 | P/E | Xiamen aro 3-4 wks | Grade D | Ra<0.5 nm, MPD<100 cm-2, RT<0.3 Ohmcm, Bow/Warp/TTV<35um |
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Item | Qty in Stock | Price $/Qty | Handle | Oxide Thick |
Device Layer | Source | Comment | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Size | Type | Res Ωcm | Thick | Thick | Orient. | Dopant | Res Ωcm |
|||||||
| 9538 | 96 | 95.00 | 6" | p-type Si:B[100] | 10-20 | 625 ±15 | 1.0±0.1µm | 2.5±0.5µm | [100] | Si:P | 1-4 | SVM | SOI Wafer, P/E, SEMI Flat, 24 wafer cassettes. | |
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Material | Orient. | Diam (mm) |
Thck (μm) |
Surf. | Source | Resistivity Ohmcm |
Comment |
|---|---|---|---|---|---|---|---|---|---|---|---|
| K07 | 1 | 100.00 | Solar Si:P | Poly | Moscow #7 | 10 Ohmcm | 0.3 kg lot of Solar Cell Silicon chunks |
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Material | Containment Qty | Diam (mm) |
Source | Comment |
|---|---|---|---|---|---|---|---|---|
| D892 | 30 | 4.00 | Cassette Bottom | 1 wafer | 4" | Entegris | H22-40-0615, Tray (no minimum order), Natural polypropylene | |
| C952 | 36 | 1.50 | Cassette Spring | 1 wafer | 2" | Entegris | H22-202-0815, single wafer spring | |
| C892 | 30 | 2.00 | Cassette Spring | 1 wafer | 4" | Entegris | H22-401-0615, Spring (lowforce) (no minimum order), Natural polypropylene | |
| F615 | 80 | 3.00 | Cassette Spring | 1 wafer | 6" | Entegris | H22-602-0615, Spring (no minimum order), Natural polypropylene | |
| B892 | 30 | 4.00 | Cassette Cover | 1 wafer | 4" | Entegris | H22-401-0615, Cover (no minimum order), Natural polypropylene | |
| B952 | 40 | 2.25 | Cassette Cover | 1 wafer | 2" | Entegris | H22-201-0615, single wafer cover | |
| H615 | 14 | 4.00 | Cassette Cover | 1 wafer | 6" | Entegris | H22-601-0615, Cover (no minimum order), Natural polypropylene | |
| G615 | 14 | 4.00 | Cassette Tray | 1 wafer | 6" | Entegris | H22-60-0615, Tray (no minimum order), Natural polypropylene | |
| 1028 | 48 | 5.00 | Cassettes | 1 wafer | 2" | Entegris | (H22-20-0615, H22-201-0615, H22-202-0615), single wafer tray, cover and spring | |
| 1039 | 10 | 5.00 | Cassettes | 1 wafer | 2" | MTI | Membrane Film Box, MTI SP3-7512 | |
| 1052 | 100 | 5.00 | Cassettes | 25 wafers | 1" | ePak0 | soft plastic, vacuum formed, double sealed in groups of 10 | |
| 1213 | 15 | 20.00 | Cassettes | 1 wafer | 4" | MTI | Gel Sticky Carrier Box , MTI SP1-12012T/BK-LL | |
| 8349 | 2720 | 4.00 | Cassettes | 1 wafer | 2" | Nasko | Top-Bottom-Spring, Fluoroware equiv., Made by Nasko | |
| 8952 | 40 | 2.25 | Cassette Bottom | 1 wafer | 2" | Entegris | H22-20-0615, single wafer tray | |
| 9731 | 46 | 14.50 | Cassettes | 25 wafers | 3" | Entegris | H6630-0009, two part wafer shipping containers (no minimum order) Assembly, shrink-wrapped, Natural polypropylene | |
| 9758 | 20 | 5.00 | Cassettes | 25 wafers | 1" | ePak | soft plastic, vacuum formed, double sealed in groups of 10 | |
| 9818 | 38 | 16.50 | Cassettes | 25 wafers | 2" | Entegris | H6620-0009, two part wafer shipping containers (no minimum order) | |
| 9892 | 10 | 8.00 | Cassettes | 1 wafer | 4" | Entegris | H22-40-0615, 3 parts (Tray, Cover Spring {low force}) (no minimum order), Natural polypropylene | |
| 9911 | 170 | 14.50 | Cassettes | 25 wafers | 3" | Entegris | H6630-0009, two part wafer shipping containers (no minimum order) Assembly, shrink-wrapped, Natural polypropylene |