III-V Inventory - El-Cat.com

Material	Type	Dopant	Orientation	Diameter	Thickness	Surface	Resistivity
							-

Updated Fri 03 September 2010
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3-5 Semiconductors

GaAs , GaP , GaSb , InAs , InP , InSb

GaAs - Gallium Arsenide

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Nc a/cm³	Mobil cm²/Vs	EPD /cm²	Comment
B349	6	320.00	undoped SI GaAs:-	[100-2.0° towards[110]] ±0.5°	6"	675	P/P	Episto	n-type >1E7		>5,000	<1E5	Epi Ready, SEMI (010) Notch
C284	4	240.00	undoped SI GaAs:-	[100]	4"	625	P/P	Episto	n-type >1E7		>5,000	<8E4	EJ Flats; Epi Ready
9575	2	200.00	undoped SI GaAs:-	[100]	3"	500	P/E	Episto	n-type >1E7		>4,000	<8E4	EJ Flats; Epi Ready
1014	6	190.00	undoped SI GaAs:-	[100]	3"	400	P/E	Comsec due 9/30	n-type		>4,000	<2E5	US Flats; Epi Ready
G014	6	200.00	undoped SI GaAs:-	[100]	3"	380	P/P	Comsec due 9/30	n-type		>4,000	<2E5	US Flats; Epi Ready
9680	24	160.00	undoped SI GaAs:-	[100]	2"	380	P/E	Girmet	n-type (1.5-8.3)E7		5,000-7,130	<2,000	VGF; US Flats; Epi Ready
F680	22	165.00	undoped SI GaAs:-	[100]	2"	350	P/P	Girmet	n-type (1.5-8.3)E7		5,000-7,130	<2,000	VGF; US Flats; Epi Ready
C149	1	40.00	undoped SI GaAs:-	[100]	2"	350	BROKEN		n-type		>4,000	<5E4	VGF; US Flats
C764	1	140.00	undoped SI GaAs:-	[100-4.0° towards[111]] ±0.5°	2"	400	P/E	Comsec	n-type 3E8	4.6E6	4,470	<8E4	US Flats; Epi Ready
I610	5	120.00	undoped SI GaAs:-	[100]	2"	380	P/P	Comsec	n-type 9.1E7	1.37E7	5,000	<5E4	US Flats; Epi Ready, TTV<10µm, Bow/Warp<20µm
D149	36	90.00	undoped SI GaAs:-	[100]	2"	380	P/E	Comsec	n-type 6.7E7	1.9E7	4,920	<8,600	VGF; US Flats; Epi Ready
B149	11	90.00	undoped SI GaAs:-	[100]	2"	380	P/E	Comsec	n-type 5.2E7	2.3E7	5,600	<6.8E4	VGF; US Flats; Epi Ready
1149	24	100.00	undoped SI GaAs:-	[100]	2"	350	P/P	Comsec	n-type 5.2E7	2.3E7	5,600	<6.8E4	VGF; US Flats; Epi Ready
9707	4	140.00	undoped GaAs:-	[100]	2"	400	P/E	ITME	n-type 0.51	2.5E15	4,900	<6.8E4	US Flats; Epi Ready
B543	25	128.00	undoped SI GaAs:-	[111B] ±0.5°	2"	400	P/P	Comsec	n-type 7.5E7	1.7E7	5,010	<8E4	EJ Flats; Epi Ready
9874	2	120.00	undoped SI GaAs:-	[111]	2"	500	P/E	ITME	n-type 3.6E7	4E7	5,200	<6.5E4	US Flats; Epi Ready
a08b	1	75.00	SI GaAs:x	Poly.	10mm	2mm		Moscow #29	~3E8				sample; 15g @ $5.00/g
9459	34	180.00	n-type GaAs:Si	[100]	3"	600	P/P	Episto	0.001-0.008		1,700-2,000	<500	VGF; EJ Flats; Epi Ready
AI82	15	220.00	n-type GaAs:Si	[100] ±0.1°	3"	450 ±15	P/P	aro 9 wks	1E3-5E3	(4.3-7)E17	2,340-3,225	<1E5	US Flats; Epi Ready
D257	5	95.00	n-type GaAs:Si	[100]	2"	400	C/C	Comsec	0.0062	3.3E17	3,060	<4.8E4	US Flats; Epi Ready
9027	17	140.00	n-type GaAs:Si	[100]	2"	350	P/E	Episto		(1-3)E18	>2,000	<1,000	VGF; Epi Ready, EJ Flats(2)
D026	21	180.00	n-type GaAs:Si	[100] ±0.1°	2"	450 ±15	P/E	Girmet		(1.5-2.8)E18	2,100	<300	VGF; US Flats(2); Epi Ready
9706	4	150.00	n-type GaAs:Si	[111]	2"	350	P/P	ITME	0.02	9E16	3,440	<3.8E4	Epi Ready
1013	26	80.00	n-type GaAs:Te	[100]	2"	350	P/E	Comsec	0.0041	4.1E17	3,660	<4.6E4	US Flats; Epi Ready
C013	3	100.00	n-type GaAs:Te	[100]	2"	350	P/E	Comsec	0.0026	8.2E17	2,900	<3.2E4	US Flats; Epi Ready
9567	1	145.00	n-type GaAs:Te	[111]	2"	385	P/P	Comsec	0.00275	1.1E18	2,070	<2.4E4	EJ Flats; Epi Ready
9995	1	200.00	p-type GaAs:Zn	[100]	3"	500	P/P	Comsec	0.105	3.04E17	218	<9.5E4	US Flats; Epi Ready
D057	2	30.00	p-type GaAs:Zn	[100]	3"	350	BROKEN	ITME	0.056	6.6E17	168	<5E4	US Flats
9793	11	145.00	p-type GaAs:Zn	[100]	2"	350	P/E	ITME	4.5	3E16	60	<3.3E4	US Flats; Epi Ready
B156	1	30.00	p-type GaAs:Zn	[100]	1.22"	625	BROKEN	ITME		2.75E18	120	<3.6E4	US Flats
9693	2	240.00	p-type GaAs:Zn	[110]	3"	550	P/P	ITME	0.105	2.7E17	217	<8E4	Epi Ready; Primary Flat @ [1,-1,0], S Flat @ [001]
C015	12	180.00	p-type GaAs:Zn	[110]	2"	400	P/E	Comsec	0.19	1.35E17	235	<5E4	1 Flat; Epi Ready
2276	11	123.20	undoped SI GaAs:-	[100]	2"	400	P/E	ITME aro 2 wks	n-type 9.6E7	1.2E7	5,100	<6.6E4	US Flats; Epi Ready
2130	5	180.80	undoped SI GaAs:-	[100-1° towards[111A]]	2"	350	P/P	ITME aro 2 wks	n-type 8.7E7	1.3E7	5,380	<7.8E4	US Flats; Epi Ready
2130A	8	180.80	undoped SI GaAs:-	[100-1° towards[111A]]	2"	375	P/P	ITME aro 2 wks	n-type 8.7E7	1.3E7	5,380	<7.8E4	US Flats; Epi Ready
2272	1	232.00	undoped SI GaAs:-	[100]	2"	380	P/P	ITME aro 2 wks	n-type 9.1E7	1.37E7	5,000	<5E4	US Flats; Epi Ready
2061	1	210.00	undoped SI GaAs:-	[100]	2"	1,800	P/E	ITME aro 2 wks	n-type 1.15E8	1.47E7	3,690	<4.39E4	US Flats; Epi Ready
2235	1	163.00	undoped SI GaAs:-	[100-6° towards[111A]]	2"	400	P/E	ITME aro 2 wks	n-type 2.5E7	4.8E7	5,000	<5E4	Epi Ready
2235B	3	139.00	undoped SI GaAs:-	[100-6° towards[111A]]	2"	400	P/E	ITME aro 2 wks	n-type 2.5E7	4.8E7	5,000	<5E4	one wafer has a small scratch, and has polishing fault on edge
1684	35	140.00	undoped SI GaAs:-	[100]	2"	400	P/E	ITME aro 2 wks	n-type 0.51	2.51E15	4,900	<6.8E4	US Flats; Epi Ready
2174	10	140.00	undoped SI GaAs:-	[100]	2"	380	P/E	ITME aro 2 wks	n-type 0.87	3.7E15	1,940	<5.8E4	US Flats; Epi Ready
2174A	1	196.00	undoped SI GaAs:-	[100]	2"	400	P/E	ITME aro 2 wks	n-type 0.64	4.9E15	2,300	<5.8E4	US Flats; Epi Ready
2313	1	280.00	undoped SI GaAs:-	[110]	2"	500	P/P	ITME aro 2 wks	n-type 4.3E7	2.86E7	5,080	<10,000	Epi Ready; PF(110), SF(100), SEMI
2277	1	151.00	undoped SI GaAs:-	[111A-5° towards[100]]	2"	400	P/E	ITME aro 2 wks	n-type 2.8E7	3.4E7	6,500	<8E4	US Flats; Epi Ready
2283	2	152.00	undoped SI GaAs:-	[111]	2"	400	P/E	ITME aro 2 wks	n-type 3.6E7	4E7	5,200	<6.5E4	US Flats; Epi Ready
P411	4	460.00	undoped SI GaAs:-	[411]	2"	400	P/E	Comsec aro 2 wks	n-type 1.13E8	1.48E7	3,730	<7.5E4	US Flats; Epi Ready
2002A	1	145.00	n-type GaAs:Si	[100]	2"	400	P/E	ITME aro 2 wks	0.158	2.6E16	3,477	<4.7E4	US Flats; Epi Ready
2002B	6	127.00	n-type GaAs:Si	[100]	2"	400	P/P	ITME aro 2 wks	0.158	2.6E16	3,477	<4.7E4	US Flats; Epi Ready
1914	4	121.00	n-type GaAs:Si	[100]	2"	400	P/E	ITME aro 2 wk	0.019	8.8E16	3,730	<5E4	US Flats; Epi Ready
2218	1	145.00	n-type GaAs:Si	[100-1° towards[110]]	2"	450	P/E	ITME aro 2 wks	7.0E-3	3.2E17	2,740	<4.6E4	US Flats, Epi Ready
2262	1	159.60	n-type GaAs:Si	[110]	2"	310	P/E	ITME aro 2 wks	0.0022	1.57E18	1,790	<2E4	EJ Flats (Primary @110, Secondary @100); Epi Ready
2262A	3	159.60	n-type GaAs:Si	[110]	2"	310	P/E	ITME aro 2 wks	0.0022	1.57E18	1,790	<2E4	EJ Flats (Primary @110, Secondary @100); Epi Ready
2094	1	160.00	n-type GaAs:Te	[100]	2"	1,500	P/E	ITME aro 2 wks	0.0106	1.85E17	3,200	<4.3E4	Epi Ready
1721	4	140.00	n-type GaAs:Te	[100-4° towards[111]]	2"	400	P/E	ITME aro 2 wks	4.1E-3	4.7E17	3,220	<5.6E4	Epi Ready
2153A	3	140.00	n-type GaAs:Te	[100]	2"	400	P/E	ITME aro 2 wks	4.86E-3	5.27E17	3,000	<4.6E4	US Flats; Epi Ready
1402	1	140.00	n-type GaAs:Te	[100]	2"	375	P/E	ITME aro 2 wks	2.68E-3	8.9E17	2,553	<5E4	US Flats; Epi Ready
2054	1	140.00	n-type GaAs:Te	[100]	2"	375	P/E	ITME aro 2 wks	2.40E-3	1.04E18	2,950	<1E5	US Flats; Epi Ready
1705	1	145.00	n-type GaAs:Te	[100]	2"	650	P/P	ITME aro 2 wks	1.65E-3	1.6E18	2,375	<10,000	US Flats; Epi Ready
2145	3	140.00	n-type GaAs:Te	[100]	2"	400	P/E	ITME aro 2 wks	1.74E-3	1.97E18	2,144	<1E5	US Flats; Epi Ready
2123	1	180.00	n-type GaAs:Te	[110]	2"	1,000	P/E	ITME aro 2 wks	1.5E-3	1.6E18	2,450	<2.5E4	Epi Ready
2161A	2	140.00	n-type GaAs:Te	[111]	2"	400	P/E	ITME aro 2 wks	1.1E-3	2.58E18	2,430	<5.9E4	semi-etched back-side
2161B	1	140.00	n-type GaAs:Te	[111B]	2"	400	P/E	ITME aro 2 wks	1.1E-3	2.58E18	2,430	<5E4	etched back-side
2161C	8	145.00	n-type GaAs:Te	[111B]	2"	385	P/P	ITME aro 2 wks	9.3E-4	2.8E18	2,400	<5E4	Epi Ready
2161D	5	140.00	n-type GaAs:Te	[111]	2"	400	P/E	ITME aro 2 wks	1.1E-3	2.8E18	2,400	<5.9E4	Epi Ready
2201	1	226.00	p-type GaAs:Zn	[100]	2"	270	P/E	ITME aro 2 wks	0.11	2.8E17	200	<3.8E4	US Flats; Epi Ready
2170	6	125.00	p-type GaAs:Zn	[100]	1.22"	625	P/E	ITME aro 2 wks	1.89E-2	2.75E18	120	<3.6E4	US Flats; Epi Ready

GaP - Gallium Phosphide

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Nc a/cm³	Mobil cm²/Vs	EPD /cm²	Comment
9510	11	360.00	undoped GaP:-	[100]	3"	300	P/P	Comsec	n-type 69	6.2E14	145	<2.3E5	US Flats; Epi Ready
9915	1	360.00	SI GaP:Cr	[100]	2"	400	P/P	ITME	n-type 2.4E13	6.5E3	40	<5E4	US Flats; Epi Ready
B915	6	360.00	SI GaP:Cr	[100]	2"	400	P/P	Comsec	n-type 2.4E13	6.5E3	40	<5E4	US Flats; Epi Ready
9431	1	6580.00	undoped GaP:- ingot	[100]	3"	25,700		Girmet	n-type	<1E16 {<1E15}		<1E5	US Flats; 0.482kg
1048	2	240.00	undoped GaP:-	[100]	2"	300	P/P	Comsec	n-type	<5E15	>140	<6E4	Epi Ready Diced into at least 10 of 10×10mm squares
8911	2	450.00	undoped GaP:-	[100]	2"	1,850	P/P	Comsec	n-type 1.7	2.2E15	163	<5.5E4	US Flats; Epi Ready
1047	4	250.00	undoped GaP:-	[100]	2"	300	P/P	Comsec	n-type 12.6	3.3E15	150	<4E4	US Flats; Epi Ready
E595	1	240.00	undoped GaP:-	[100]	2"	300	P/P	Comsec	n-type 8.7	4.5E15	160	<5.1E4	US Flats; Epi Ready
B333	4	220.00	undoped GaP:-	[100]	2"	300	P/P	Comsec	n-type 1.3	3E16	160	<5.8E4	US Flats; Epi Ready
C206	1	280.00	undoped GaP:-	[100-10° towards[110]]	2"	400	P/E	ITME	n-type 1.3	4E16	120	<2E4	US Flats; Epi Ready
B206	1	260.00	undoped GaP:-	[100-5° towards[110]]	2"	400	P/E	ITME	n-type 1.3	4E16	120	<2E4	1 US Flat; Epi Ready
E194	1	120.00	undoped GaP:-	[100]	2"	300	P/P	Comsec	n-type 9	5E16	150	<1E5	US Flats; Epi Ready; With Dimples but within 8<µm limit
B802	1	290.00	undoped GaP:-	[100]	2"	1,000	P/P	Comsec	n-type 0.73	5.2E16	160	<2E4	US Flats; IR T Spectrum available
1185	1	295.00	undoped GaP:-	[110]	2"	960	L/L	ITME	n-type 1.8E8	2.3E8	160	<5E4	Epi Ready; PF-.(001)-16mm; SF->(111)A -8mm
H921	4	360.00	undoped GaP:-	[111A] ±0.5°	3"	550	P/E	Comsec	n-type 5.3	8.1E15	145	<6E4	US Flats; Epi Ready
G921	6	360.00	undoped GaP:-	[111A] ±0.5°	3"	550	P/E	Comsec	n-type 5.3	8.1E15	145	<6E4	US Flats; Epi Ready
F921	3	360.00	undoped GaP:-	[111A] ±0.5°	3"	550	P/E	Comsec	n-type 5.3	8.1E15	145	<6E4	US Flats; Epi Ready
J921	3	360.00	undoped GaP:-	[111A] ±0.5°	3"	550	P/E	Comsec	n-type 0.48	1E17	129	<5.5E4	US Flats; Epi Ready
9998	2	280.00	SI undoped GaP:-	[111]	2"	450	P/E	ITME	n-type 3.5E10	1.4E6	125	<5E4	Epi Ready; PF@(110), SF@(112)
9222	7	250.00	undoped GaP:-	[111] ±0.5°	2"	400	P/P	Comsec	n-type 6.5	6.9E15	140	<3.4E4	US Flats; Epi Ready
B926	1	240.00	undoped GaP:-	[111]	2"	400	P/P	ITME	n-type 1.53	2.7E16	150	<3.4E4	EJ Flats; Epi Ready
E942	6	240.00	n-type GaP:S	[100]	2"	350	P/P	Comsec		(1-9)E17		<1E5	US Flats; Epi Ready
H712	2	250.00	n-type GaP:S	[100-4° towards[001]] ±0.5°	2"	400	P/E	Comsec	0.36	1.6E17	110	<2E5	US Flats; Epi Ready
9594	8	240.00	n-type GaP:S	[100]	2"	400	P/P	Comsec	0.155	4E17	100	<8E4	US Flats; Epi Ready
9775	2	398.00	n-type GaP:S	[100-6° towards[[111]A]]	2"	400	P/E	Comsec	0.058	9.9E17	107	<5.3E4	US Flats; Epi Ready
1139	3	180.00	n-type GaP:S	[100]	2"	500	P/E	ITME	0.059	1.08E18	100	<4.5E4	EJ Flats; Crystal fault 3-8mm long at wafer edge
1235	2	250.00	p-type GaP:Zn	[100]	2"	350	P/E	ITME due 9/07		2.05E17	74	<4.5E4	EJ Flats; Epi Ready
1224	1	325.00	p-type GaP:Zn	[100-2° towards[111A]] ±0.5°	2"	400	P/E	ITME	0.2	4E17	80	<9.2E4	US Flats; Epi Ready
1153	4	250.00	p-type GaP:Zn	[100]	2"	400	P/E	ITME	0.081	1.1E18	70	<2E5	EJ Flats; Epi Ready
F126	1	255.00	p-type GaP:Zn	[111B]	2"	500	P/E	ITME	0.11	8.8E17	64	<8E4	EJ Flats; Epi Ready
1080	2	255.00	p-type GaP:Zn	[111B]	2"	500	P/E	ITME	0.11	8.8E17	64	<8E4	EJ Flats; Epi Ready
G126	1	255.00	p-type GaP:Zn	[111]	2"	450	P/E	ITME	0.075	1.28E18	63	<8E4	EJ Flats; Epi Ready
G31	5	296.00	SI GaP:Cr	[100]	2"	400	P/P	Comsec aro 3 wks	n-type >1E6			<1E5	US Flats; Epi Ready
178	9	323.20	SI GaP:Cr	[100]	2"	400	P/P	ITME aro 2 wks	2.4E13	5.6E3	40	<5E4	Epi Ready
G31b	10	448.00	SI undoped GaP:-	[100]	3"	500	P/P	Comsec aro 3 wks	n-type >1E6 {>7E8}			<1E5	US Flats; Epi Ready
B853	2	850.00	SI undoped GaP:-	[100]	3"	1,000	P/P	Comsec aro 1 wks	n-type 7.3E8	6E7	142	<4.1E4	US Flats; Epi Ready
117	4	349.20	undoped GaP:-	[100]	2"	300	P/P	ITME aro 2 wks	n-type 12.6	3.3E15	150	<4E4	US Flats; Epi Ready
M-94	2	278.00	undoped GaP:-	[100]	2"	400	P/E	ITME aro 2 wks	n-type 1.95	2.4E16	130	<5E4	SEMI; Test
103	2	386.00	undoped GaP:-	[100]	2"	2,000	P/P	ITME aro 2 wks	n-type 1.6	2.5E16	150	<5.8E4	Epi Ready
117A	4	313.20	undoped GaP:-	[100-2° towards[110]]	2"	500	P/E	ITME aro 2 wks	n-type 1.04	3.9E16	168	<5E4	(100) ->2°-><110> EJ
M087C	1	260.00	undoped GaP:-	[100-2° towards[110]]	2"	400	P/E	ITME aro 2 wks	n-type 1.3	4E16	120	<2E4	Small gauges on the edge
M087B	3	301.00	undoped GaP:-	[100-10° towards[110]]	2"	400	P/E	ITME aro 2 wks	n-type 1.3	4E16	120	<2E4	Epi Ready
M087A	2	277.00	undoped GaP:-	[100-5° towards[110]]	2"	400	P/E	ITME aro 2 wks	n-type 1.3	4E16	120	<2E4	Epi Ready
M-087	2	308.00	undoped GaP:-	[100-5°]	2"	400	P/E	ITME aro 2 wks	n-type 1.3	4E16	120	<2E4	Epi Ready
M-087A	3	308.00	undoped GaP:-	[100-10°]	2"	400	P/E	ITME aro 2 wks	n-type 1.3	4E16	120	<2E4	Epi Ready
M-087B	1	256.00	undoped GaP:-	[100-2°]	2"	400	P/E	ITME aro 2 wks	n-type 1.3	4E16	120	<2E4	Epi Ready
186	15	252.80	undoped GaP:-	[111]	2"	450	P/E	ITME aro 2 wks	n-type 60.9	6E14	169	<4.5E4	Epi-Ready, Primary Flat @ (110), Secondary @ (112)
186A	15	265.00	undoped GaP:-	[111]	2"	450	P/E	ITME aro 2 wks	n-type 60.9	6E14	169	<4.5E4	Epi Ready; PF@(110),SF@(112)
144	13	255.00	undoped GaP:-	[111B]	2"	400	P/E	ITME aro 2 wks	n-type 4.6	1E16	135	<8.8E4	Epi Ready; PF@(110), SF@(112)
149	1	376.00	undoped GaP:-	[111B]	2"	400	P/E	ITME aro 2 wks	n-type 3.2	2E16	170	<5E4	EJ Flats; Epi Ready
88	1	346.00	n-type GaP:S	[100]	2"	400	P/E	ITME aro 2 wks	0.24	2.3E17	110	<7.1E4	EJ
86	7	242.40	n-type GaP:S	[100]	2"	400	P/E	ITME aro 2 wks	0.131	4.3E17	110	<1.2E5
108	2	253.00	n-type GaP:S	[100-2° towards[110]]	2"	350 ±10	P/E	ITME aro 2 wks	0.042	1.8E18	82	<5.9E4	EJ Flats; Epi Ready
113	4	255.00	n-type GaP:S	[100-2°]	2"	350 ±10	P/E	ITME aro 2 wks	0.034	2E18	90	<6.7E4	reclaimed wafer
M008A	1	319.00	n-type GaP:S	[111]	2"	1,000	P/P	ITME aro 2 wks	0.209	2.21E17	135	<5E4	Epi Ready
M-008	1	400.00	n-type GaP:S	[111]	2"	1,000	P/P	ITME	0.209	2.21E17	135		Epi Ready
M-009	7	265.00	n-type GaP:S	[111]	2"	275	P/E	ITME aro 2 wks	0.136	4.37E17	105	<5E4	1 wafer has small loss on edge
187C	40	280.00	p-type GaP:Zn	[100]	2"	400	P/E	ITME aro 2 wks	0.310	2.5E17	78	<4.5E4	EJ Flats; Epi Ready
183	16	270.00	p-type GaP:Zn	[100]	2"	400	P/E	ITME aro 2 wks	0.164	5.5E17	69	<5.3E4	US Flats; Epi Ready
187D	1	328.00	p-type GaP:Zn	[100]	2"	400	P/E	ITME aro 2 wks	0.117	6.95E17	77	<4.5E4	US Flats; Epi Ready
90	2	250.00	p-type GaP:Zn	[100]	2"	400	P/E	ITME aro 2 wks	0.081	1.1E18	70	<2E5	EJ Flats; Epi Ready
177	10	250.00	p-type GaP:Zn	[100]	2"	350	P/E	ITME aro 2 wks	0.0776	1.39E18	57	<5E4	EJ Flats; Epi Ready
177B	7	260.00	p-type GaP:Zn	[100]	2"	270	P/P	ITME aro 2 wks	0.0776	1.39E18	57	<5E4	EJ Flats; Epi Ready
169	5	254.00	p-type GaP:Zn	[111]	2"	450	P/E	ITME aro 2 wks	0.075	1.28E18	63	<8E4	EJ Flats; Epi Ready

GaSb - Gallium Antimonide

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Nc a/cm³	Mobil cm²/Vs	EPD /cm²	Comment
9761	3	320.00	n-type GaSb:Te	[100-6° towards[111]] ±0.5°	2"	400	P/E	ITME	0.0019-0.0048	(4.4-13)E17	2,540-2,950	<10,000	US Flats; Epi Ready
D924	3	340.00	undoped GaSb:-	[100]	2"	350	P/E	Comsec	p-type 0.123	1.83E16	2,770	<4E4	US Flats; Epi Ready
E924	8	360.00	undoped GaSb:-	[100]	2"	450	P/P	Comsec	p-type 0.123	1.83E16	2,770	<4E4	US Flats; Epi Ready
D761	1	298.00	p-type GaSb:Zn	[100]	2"	500	P/E	ITME	0.0073	2.8E18	300	<4,900	US Flats; Epi Ready
GaSb30	105	350.00	n-type GaSb:Te	[100]	2"	450	P/E	ITME aro 5 wks	<1.5E-2 @ 77K	(0.11-1.28)E18 @ 77K	3800-5900 @ 77K	<5.5E3	US Flats; Epi Ready
GaSb29	135	350.00	n-type GaSb:Te	[100]	2"	450	P/E	ITME aro 5 wks	(4.3-5.5)E-3 @ 77K	(0.4-1.9)E18 @ 77K	3942-5872 @ 77K	<1.1E4	US Flats; Epi Ready
18	2	308.00	n-type GaSb:Te	[100-6° towards[111]]	2"	400	P/E	ITME aro 2 wks	1.9E-3-4.8E-3	(4.4-13)E17	2,540-2,950	<10,000	US Flats; Epi Ready
GaSb28	107	350.00	p-type GaSb:-	[100]	2"	450	P/E	ITME aro 5 wks	0.122-0.130 @ 77K	(1.7-1.9)E16 @ 77K	2724-2836 @ 77K	<1.1E5	US Flats; Epi Ready
GaSb27	94	350.00	p-type GaSb:-	[100]	2"	450	P/E	ITME aro 5 wks	0.120-0.125 @ 77K	(1.7-1.9)E16 @ 77K	2650-2908 @ 77K	<8.1E4	US Flats; Epi Ready
Cz-27	2	374.00	undoped GaSb:-	[100]	2"	500	P/E	ITME aro 3 wks	p-type 0.063	1.55E17	638	<2,800	Epi Ready
Cz-27a	2	302.00	undoped GaSb:-	[100]	2"	500	P/E	ITME aro 3 wks	p-type 0.063	1.55E17	638	<2,800
GaSb19	86	350.00	p-type GaSb:Si	[100]	2"	450	P/E	ITME aro 5 wks	0.025-0.030 @ 77K	(2.67-3.61)E17 @ 77K	705-763 @ 77K		US Flats; Epi Ready
GaSb22	93	350.00	p-type GaSb:Si	[100]	2"	450	P/E	ITME aro 5 wks	(7.1-7.3)E-3 @ 77K	(1.9-3.6)E18 @ 77K	267-451 @ 77K	<1.0E4	US Flats; Epi Ready
GaSb20	86	350.00	p-type GaSb:Si	[100]	2"	450	P/E	ITME aro 5 wks	~8.44E-4 @ 77K	~2.11E19 @ 77K	~350 @ 77K	<2.0E3	US Flats; Epi Ready
GaSb24	114	350.00	p-type GaSb:Zn	[100]	2"	450	P/E	ITME aro 5 wks	(6.3-7.6)E-3 @ 77K	(5.1-5.2)E18 @ 77K	340-373 @ 77K	<2.6E4	US Flats; Epi Ready
GaSb23	107	350.00	p-type GaSb:Zn	[100]	2"	450	P/E	ITME aro 5 wks	(3.3-3.7)E-3 @ 77K	(5.1-5.2)E18 @ 77K	330-353 @ 77K	<9.2E4	US Flats; Epi Ready
GaSb26	110	350.00	p-type GaSb:Zn	[100]	2"	450	P/E	ITME aro 5 wks	(2.3-2.5)E-3	(7.7-7.9)E18 @ 77K	310-360 @ 77K	<1.7E3	US Flats; Epi Ready

InAs - Indium Arsenide

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Nc a/cm³	Mobil cm²/Vs	EPD /cm²	Comment
D771	2	280.00	n-type InAs:S	[100]	2"	400	P/E	Comsec	0.000740	5.7E17	14,770	<5,500	US Flats; Epi Ready
C847	1	280.00	n-type InAs:S	[100]	2"	450	P/E	Comsec	0.000740	5.7E17	14,770	<5,500	US Flats; Epi Ready
9703	1	290.00	p-type InAs:Zn	[100]	2"	400	P/E	ITME		7.2E18	110	<100	US Flats; Epi Ready
82	5	224.00	undoped InAs:-	[100]	40mm	1,000	P/P	ITME aro 2 wks	n-type 0.0085	2.5E16	22,000	<100	lamella with length 7 mm
98	6	316.80	undoped InAs:-	[100]	2"	400	P/P	ITME	n-type 6.27E-3	1.8E16	54,000	<1,000	Epi Ready
InAs98	50	290.00	undoped InAs:-	[100]	2"	400	P/E	ITME aro 5 wks	n-type	(2-3)E16	20,500-22,000	<5,000	Epi Ready, US Flats
InAs88	20	298.00	undoped InAs:-	[100]	2"	400	P/E	ITME aro 5 wks	n-type	(2-3)E16	21,000-23,000	<100	Epi Ready, US Flats
InAs96	55	298.00	n-type InAs:S	[100]	2"	400	P/E	ITME aro 5 wks		(6-9)E17	12,500-14,000		Epi Ready, US Flats
96	4	325.20	n-type InAs:S	[100]	2"	400	P/E	ITME aro 3 wks	6.4E-4	6.7E17	14,400	<1,500	Epi Ready
87	1	304.00	p-type InAs:Zn	[100]	2"	450	P/E	ITME aro 2 wks	8.4E-3	7.2E18	110	<100	Epi Ready

InP - Indium Phosphide

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Nc a/cm³	Mobil cm²/Vs	EPD /cm²	Comment
C674	5	520.00	SI InP:Fe	[100]	3"	600	P/E	ITME	2.2E7	1.38E8	2,050	<7.3E4	US Flats; Epi Ready
8585	3	220.00	SI InP:Fe	[100]	2"	350	P/E	Comsec	(1.85-8.85)E7	(3.6-17)E7	1,970-1,980	<5E4 (4.1-4.7)E4	US Flats; Epi Ready
B134	7	220.00	SI InP:Fe	[100]	2"	450	P/E	Comsec	4.5E17	6.9E7	2,020	<5E4	US Flats; Epi Ready
9198	5	240.00	n-type InP:S	[100]	2"	400	P/P	Comsec	(0.00060-0.00094)	(5.1-8.5)E18	1,250-1,500	<6,200	US Flats; Epi Ready
9308	4	220.00	n-type InP:S	[100]	2"	400	P/E	Comsec	0.0007	7.1E18	1,250	<6,200	US Flats; Epi Ready
D086	4	240.00	n-type InP:S	[100]	2"	400	P/P	Comsec	6.5E-4	8.3E18	1,160	<1.1E4	US Flats; Epi Ready
P050	10	243.00	InP:S+Zn	[100]	2"	400	P/E	Comsec aro 2 wks	2.03E-2	3.8E17	810	<4.2E4	US Flats; Epi Ready
700	12	320.40	SI InP:Fe	[100]	50.7	350	P/E	ITME aro 2 wks	2.9E7	1.1E8	2,000	<2.3E4	Epi Ready
700A	1	412.00	SI InP:Fe	[100]	50.5	350	P/E	ITME aro 2 wks	4.5E7	6.9E7	2,020	<5E4	Epi Ready
P098	1	265.00	SI InP:Fe	[100]	2"	350	P/E	ITME aro 2 wks	(3.6-17.0)E7	(1.85-8.85)E7	1,970-1,980	<4.7E4	US Flats; Epi Ready
491	1	265.00	SI InP:Fe	[100]	2"	300	P/E	ITME aro 2 wks	1.35E7	3.03E8	1,669	<5.4E4	US Flats; Epi Ready
P047	80	220.00	n-type InP:(S+Zn)	[100]	50mm	400*	P/E*	Comsec aro 4 wks	0.028-0.072	(4.4-4.9)E18	46	<300	2Flts
P068	2	490.00	n-type InP:S	[100]	3"	600	P/E	ITME aro 2 wks	4.35E-4	1.48E19	985	<2,000	EJ Flats; Epi Ready
IP_1	18	180.00	n-type InP:S	[100]	50	450*	C/C*	Comsec aro 2 wks	US Flts	(3.2-4.2)E18		<4E4
511	1	265.00	n-type InP:S	[100]	2"	500	P/E	ITME aro 2 wks	1.2E-3	3.9E18	1,280	<2.1E4	Epi Ready
IP_2	24	180.00	n-type InP:S	[100]	50	450*	C/C*	Comsec aro 2 wks	US Flts	(4.2-5.2)E18		<4E4
P025	40	220.00	n-type InP:S	[100]	2"	400*	P/E*	Comsec aro 4 wks	0.00094-0.00054	(4.3-9.5)E18		6,000	2Flts
IP_3	24	180.00	n-type InP:S	[100]	50	450*	C/C*	Comsec aro 2 wks	US Flts	(5.2-8.1)E18		<3E4
P037	5	250.00	n-type InP:S	[100]	2"	400	P/E	ITME aro 2 wks	7.72E-4	5.77E18	1,408	<10,000	US Flats; Epi Ready
P054B	2	255.00	n-type InP:S	[100]	2"	350	P/E	ITME aro 2 wks	8.4E-4	6.12E18	1,410	<5,000	US Flats; Epi Ready
P041	5	250.00	n-type InP:S	[100]	2"	400	P/E	ITME aro 2 wks	7.23E-4	6.8E18	1,330	<4,500	Epi Ready
P029	6	250.00	n-type InP:S	[100]	2"	400	P/E	ITME aro 2 wks	5.7E-4	8.24E18	1,330	<10,000	US Flats; Epi Ready
IP_4	4	180.00	n-type InP:S	[100]	50	450*	C/C*	Comsec aro 2 wks	US Flts	8.5E18		<1E4
474A	3	255.00	n-type InP:S	[100]	2"	400	P/E	ITME aro 2 wks	8.08E-4	9.18E18	1,110	<5E4	US Flats; Epi Ready
474	4	253.00	n-type InP:S	[100]	2"	400	P/E	ITME aro 3 wks	7.08E-4	9.3E18	950	<1,000	SEMI
474B	2	255.00	n-type InP:S	[100]	2"	400	P/E	ITME aro 2 wks	7.08E-4	9.3E18	950	<1,000	EJ Flats; Epi Ready
636	4	295.00	n-type InP:S	[115]	2"	400	P/E	ITME aro 2 wks	1.08E-3	4.07E18	1,416	<3.7E4	Epi Ready

InSb - Indium Antimonide

Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that layer)

Add to Cart	Item	Qty in Stock	Price $/unit	Material	Orient.	Diam (mm)	Thck (μm)	Surf.	Source	Resistivity Ωcm	Nc a/cm³	Mobil cm²/Vs	EPD /cm²	Comment
	G860	4	360.00	n-type InSb:Te	[111B] ±0.5°	2"	450	P/E	Comsec	0.00011-0.00033	(5.7-20)E17	24,000-34,000	<1,300	EJ Flats; Epi Ready
	F860	2	348.00	n-type InSb:Te	[111A] ±0.5°	2"	450	P/E	Comsec	0.00011-0.00033	(5.7-20)E17	24,000-34,000	<1,300	US Flats; Epi Ready

Add to
Cart

Item

Qty in
Stock

Price
$/unit

Material

Orient.

Diam
(mm)

Thck
(μm)

Surf.

Source

Resistivity
Ωcm

Nc
a/cm³

Mobil
cm²/Vs

EPD
/cm²

Comment

G860

360.00

n-type InSb:Te

[111B] ±0.5°

450

P/E

Comsec

0.00011-0.00033

(5.7-20)E17

24,000-34,000

<1,300

EJ Flats; Epi Ready

F860

348.00

n-type InSb:Te

[111A] ±0.5°

450

P/E

Comsec

0.00011-0.00033

(5.7-20)E17

24,000-34,000

<1,300

US Flats; Epi Ready

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