SILICON

EL-CAT Inc. supplies semiconductor grade monocrystalline Silicon in a range of characteristics.

Process: Czochralski (CZ) or Float Zone (FZ) (also CFZ and controlled Oxygen MCZ).

Form: Ingots or wafers

Diameters: CZ: 1" / 2" / 3" / 4" / 5" / 6"Ø;
FZ: 1" / 2" / 3" / 4" / 5" / 6"Ø.


Orientation: [100], [110], [111] with offset 0º to 10º, accurate to ±0.5º, (±0.1º on special orders).

Dopants: Boron (p-type Si:B) -          CZ: Resistivity 0.001 - 50 Ωcm;       FZ/CFZ: 0.010 - 10,000 Ωcm
Phosphorus (n-type Si:P) -  CZ: Resistivity 1 - 50 Ωcm;             FZ/CFZ: 0.010 - 10,000 Ωcm
Antimony (n-type Si:Sb) -    CZ: Resistivity 0.005 - 0.100 Ωcm
Arsenic (n-type Si:As) -       CZ: Resistivity 0.001 - 0.005 Ωcm
(we can provide some Gallium doped p-type Si:Ga and some Si:P at resistivity as low as 0.001 Ωcm)





Wafers: As-Cut (C/C), Edged-Lapped-Etched (RTP or E/E),
One-side-polished (P/E), Both-sides-polished (P/P).


Back-side: Alkaline etched / Acid (bright) etched / Soft damage / Hard damage
/ CVD Oxide Backseal / LTO Oxide / Thermal Oxide / PolySilicon Backseal


Thickness: 200um to 1,000um (80um to 10,000um on special orders)
(standard are 2"Øx280um, 3"Øx380um, 4"Øx525um, 5"Øx625um, 6"Øx675um)
Thickness tolerance on lapped E/E wafers ±10um standard (±5um possible)
on one-side-polished wafers: ±25um standard (±15um possible)




Flats: Major, or Major and Minor flats, per SEMI standard.
Flat orientation accuracy ±0.5º, (±0.1º on special orders).


Packing: In 25 wafer Empak or soft cassettes, single or double sealed in polyethylene bags.

Other specifications on quality of slicing (Bow/Warp), lapping (TTV), polishing (TIP),
Cleanliness (particle count eg. fewer than 10 particles greater than 0.3µm per wafer),
Oxygen content, Carbon content etc., all per SEMI
Warp/Bow: <40µm standard (3"Ø & 4"Ø) (<20µm possible even in quantity production)
<50µm standard (5"Ø) (<25µm possible), <60µm standard (6"Ø) (<30µm possible)
TTV (on lapped and etched wafers): <4um standard (3"Ø & 4"Ø) (<2um possible)
<4um standard (5"Ø) (<3um possible), <5um standard (6"Ø) (<4um possible)
TIR (on one-side-polished wafers): <4um standard (3"Ø & 4"Ø)
<4um standard (5"Ø), <5um standard (6"Ø)
Site Flatness (SEMI terms SFLR 15×15mm sites): <2um
Surface roughness (when measured - not measured routinely): <8A
Carbon Concentration (CZ silicon): <0.5ppma
Oxygen concentration (CZ silicon): (24-38)ppma (per ASTM F121-76) (standard)
(31-37) for [111] material possible, (24-32) for [100] possible, (28-35) for [110] possible
Note: Tighter TTV or TIR limits can be achieved by automated TTV/TIR measurement & wafer sorting.














Check our Silicon wafer or ingot inventory, for material currently in stock.
Register to query by e-mail for a quotation for specific silicon needs.